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No Longer Manufactured
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT50J325
Order Code1300816
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.45V
Power Dissipation240W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
- Fourth generation IGBT
- Enhancement mode type
- Fast switching
- Operating frequency up to 50KHz
- Maximum collector emitter saturation voltage of 2.45V
- FRD included between emitter and collector
- Collector emitter voltage VCES of 600V
- DC collector current of 50A
- Junction temperature of 150°C
- Collector power dissipation of 240W
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
240W
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00975