Power is a dish best served cool
Stay competitive and reduce costs with Infineon CoolSiC™ MOSFETs and diodes
Infineon CoolSiC™ solutions maximise competitive advantage by reducing costs, overcoming design challenges and boosting performance reliability.
With 30 years of experience developing silicon carbide (SiC) technology, Infineon’s portfolio addresses customer needs for smarter, more efficient energy generation, transmission and consumption.
Infineon supplies all leading power technologies: silicon (Si), SiC, gallium nitride (GaN) and GaN-on-Si and is a pioneer in the commercial use of SiC technology. The portfolio includes CoolSiC™ Schottky diodes, CoolSiC™ hybrid devices, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.
New productsWhat is the CoolSiC™ MOSFET M1H?
M1H stands for enhanced generation 1 SiC MOSFET. It offers added features and a wider range of control possibilities compared to the generation 1 silicon carbide devices.
The enhanced generation 1 CoolSiC™ enables a significantly larger gate operation window that improves the on-resistance for a given die size. At the same time, the larger gate operation window provides a high robustness against voltage peaks at the gate, without any restrictions even at higher switching frequencies.
Features & Benefits
- Extended operating conditions without compromising the reliability for a more convenient design-in
- Flexible gate source voltage window
- Maximum rated gate-source voltages are extended to 23 V and -10 V to cover over-and undershoots.
- Maximum junction temperature of Tvjop of 175°C
- Threshold voltage stability under real application conditions
- CoolSiC™ MOSFETs M1H are used in fast-switching applications like photovoltaic, UPS, fuel cells, EV charging, or storage systems.
.XT for discrete SiC MOSFETs
'For some applications, specific requirements, like long operation hours or high power density, have become mandatory. Infineon has developed advanced interconnection technology - .XT for discrete products to meet this demand.
The .XT eliminates solder joints and uses diffusion soldering to attach the CoolSiC™ MOSFET dies to the lead frame for more robust interconnection layers. As a result, the thermal dissipation capability can be improved by up to 30% and the thermo-mechanical stress is reduced for a better power cycling performance.
- Increase output current by up to 14% for the same temperature
- Increase lifetime expectancy by up to 80% when lowering the operating temperature
OR
CoolSiC™ MOSFET Isolated EiceDRIVER™ Gate Drivers
1ED3322MC12NXUMA1
8.5 A, 5.7 kV (rms) single-channel isolated gate driver with short-circuit protection, active Miller clamp and SiC UVLO, UL 1577 & VDE 0884-11 certified.
1ED3251MC12HXUMA1
18 A, 5.7 kV (rms) single-channel isolated gate driver with two-level slew-rate control and active Miller clamp, UL 1577 & VDE 0884-11 certified.
1ED3127MU12FXUMA1
10 A, 3 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 12 V UVLO.
1ED3142MU12FXUMA1
6.5 A, 3 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 13.6 V UVLO.
CoolSiC™ by application
Clean energy, energy efficiency and electric mobility drive demand for new power semiconductor solutions. SiC could be an answer to some of these challenges by providing more energy from clean resources.
Most of the applications surrounding us today are based on silicon (Si). But those applications call for advances in efficiency, power density and new ways to overcome silicon’s performance limitations. SiC technology has reached the tipping point. Today, designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies.
Some of the most popular applications include:
CoolSiC™ MOSFETs reduce charging time by half at the same charging station and footprint. One 1200 V SiC MOSFET is sufficient to support a DC-link voltage of 800 V.
Doubling the power density allows a component count reduction of a comparable Si solution by 50%, thanks to doubled voltage in the switch positions.
CoolSiC™ MOSFET 650 V and 1200 V are slashing losses by 50% for extra energy.
As the battery bank makes up the major portion of the total system costs for Energy Storage Systems, a change from silicon super junction MOSFET to CoolSiC™ MOSFET can lead to approximately 2% extra energy without increasing battery size.
CoolSiC™ MOSFET powers the next generation of servo drive design.
Up to 80% loss reduction compared to Si IGBT solution is possible, thanks to the resistive behavior of SiC MOSFET, and the load profile of servos is a perfect match.
CoolSiC™, CoolMOS™ and EiceDRIVER™ for energy-smart SMPS designs combine in industrial applications like telecom datacenter.
The trends of improved energy efficiency, high power density and ever-growing output power drive industrial SMPs. Wide-bandgap materials enable the move to high-performance topologies.
Automotive applications are size limited to provide more cabin comfort and design flexibility.
1200 V CoolSiC™ MOSFETs implemented in electric drivetrains enable system size reduction of up to 80%, thanks to higher power density, lower cooling effort and fewer passive components.
e14 Community CoolSiC™ Tech Spotlight and Webinar
Established in 2009, the element14 Community is unique in the electronics industry and provides a forum for engineers, makers, educators and students to share ideas and become inspired.
The e14 Community is an impartial hub of information and product reviews. Explore the Tech Spotlight and Webinar that have been dedicated to the CoolSiC™ MOSFET.
Webinar: CoolSiC™ MOSFET: Coming soon!
This interactive platform allows for panel discussions, multilocation speakers and a live product demonstration of the CoolSiC™ MOSFET. Watch live or on demand.
Boards for all requirements
EVAL1ED3122MC12HSICTOBO1
Entry Level Evaluation Kit - for testing functionalities of SiC. Both 650 V and 1200 V SiC MOSFETs are included, need to be soldered to the board dependent on use case.
Multi-purpose board (to measure the performance of the products).
EVALPSDPMAINTOBO1
Universal discrete Power Semiconductor 600 V - 1200 V in TO-247 3-/4-pin evaluation platform. The Universal evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the Discrete Power Semiconductors in TO247 3-pin and 4-pin.
EVAL1ED3491MX12MTOBO1
EVAL1ED3491MX12M evaluation board demonstrates the functionality, adjustment possibilities, and features of the EiceDRIVER™ 1ED-X3 analogue gate driver IC s.
REFSICD2PAKMCTOBO1
Reference board for 1200 V CoolSiC™ MOSFET in TO263-7.
This Reference Board is another drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1EDC Compact 1EDC20I12MH with an integrated active Miller clamp preventing parasitic turn-on.
REFSICD2PAKBPTOBO1
Reference board for 1200 V CoolSiC™ MOSFET in TO263-7.
This Reference Board is a drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1ED Compact 1EDI20H12AH with allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.
EVALPSE1BF12SICTOBO1
Evaluation Board designed as bidirectional buck-boost converter for double-pulse measurements as well as functional tests.
Application focus: Application focus: Solar, UPS.
EVALM1IM828ATOBO1
EVALM1IM828ATOBO1 is an evaluation board for CIPOS™ Maxi features 1200V SiC IPM IM828-XCC.
REF62WFLY1700VSICTOBO1
A 62.5W auxiliary power supply for three-phase power converter using 1700 V CoolSiC™ MOSFET in a single-ended flyback topology.
REFDAB11KIZSICSYSTOBO1
REF-DAB11KIZSICSYS is a CLLC resonant DC/DC converter board able to provide up to 11kW at 800V output voltage.
