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FF2600UXTR33T2M1BPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 720 A, 3.3 kV, 0.0031 ohm, Module
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ManufacturerINFINEON
Manufacturer Part NoFF2600UXTR33T2M1BPSA1
Order Code4574879
Product RangeXHP 2 Series
Also Known AsFF2600UXTR33T2M1, SP005404848
Technical Datasheet
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| Quantity | Price |
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| 1+ | Rs.477,145.580 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF2600UXTR33T2M1BPSA1
Order Code4574879
Product RangeXHP 2 Series
Also Known AsFF2600UXTR33T2M1, SP005404848
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id720A
Drain Source Voltage Vds3.3kV
Drain Source On State Resistance0.0031ohm
Transistor Case StyleModule
No. of Pins15Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max5.55V
Power Dissipation20mW
Operating Temperature Max175°C
Product RangeXHP 2 Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
FF2600UXTR33T2M1BPSA1 is a 3.3KV, XHP™ 2 CoolSiC™ MOSFET half bridge module. Suitable for traction drives, high-power converters, high-frequency switching application applications.
- Electrical features: VDSS = 3300V, IDN = 750A / IDRM = 1500A, Tvj,op = 175°C
- Low switching losses, high current density, low inductive design
- Mechanical features: high power density, high creepage and clearance distances
- Package with CTI > 600, Rds(on) Test Voltage 15V
- AlSiC base plate for increased thermal cycling capability
- AlN substrate with low thermal resistance
- 3.1mohm drain-source on-resistance at ID = 750A, VGS = 15V, Tvj = 25°C
- 720A Continuous DC drain current at Tvj = 175°C, VGS = 15V, TC = 25°C
- 5.55V gate threshold voltage at ID = 675mA, VDS = VGS, Tvj = 25°C, (after 1ms pulse at VGS = +20V)
- 20mW max power dissipation at TNTC = 25°C
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
720A
Drain Source On State Resistance
0.0031ohm
No. of Pins
15Pins
Gate Source Threshold Voltage Max
5.55V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
Dual N Channel
Drain Source Voltage Vds
3.3kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
20mW
Product Range
XHP 2 Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:3A228.c
EU ECCN:3A228.c
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001