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IRF1104PBF
Power MOSFET, N Channel, 40 V, 100 A, 0.009 ohm, TO-220AB, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIRF1104PBF
Order Code3155125
Product RangeHEXFET Series
Also Known AsSP001570050
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | Rs.85.260 |
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Rs.85.26
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF1104PBF
Order Code3155125
Product RangeHEXFET Series
Also Known AsSP001570050
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance0.009ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRF1104PBF
2 Products Found
Product Overview
IRF1104PBF is a HEXFET® Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fast switching, fully avalanche rated
- Drain-to-source breakdown voltage is 40V (max, VGS = 0V, ID = 250µA)
- Breakdown voltage temp coefficient is 0.038V/°C (typ, 25°C, ID = 1mA)
- Gate threshold voltage range from 2.0 to 4.0V (VDS = VGS, ID = 250µA)
- Forward transconductance is 37S (max, VDS = 25V, ID = 60A)
- Drain-to-source leakage current is 25µA (typ, VDS = 40V, VGS = 0V)
- Total gate charge is 93nC (max, ID = 60A, TJ = 25°C)
- Turn-on delay time is 15ns (typ, VDD = 20V, TJ = 25°C)
- TO-220 package, operating and storage temperature range from -55 to +175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536