Product Information
Product Overview
The IRF7809AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers particularly low RDS (ON) and high CdV/dt immunity for synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.
- Low conduction losses
- Low switching losses
- 100% Rg tested
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Applications
Power Management
Technical Specifications
N Channel
14.5A
SOIC
4.5V
2.5W
150°C
-
30V
0.009ohm
Surface Mount
1V
8Pins
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate