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| Quantity | Price |
|---|---|
| 1+ | Rs.121.950 |
| 10+ | Rs.68.350 |
| 100+ | Rs.44.600 |
| 500+ | Rs.35.730 |
| 1000+ | Rs.35.230 |
| 5000+ | Rs.34.730 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.121.95
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLB4132PBF
Order Code2726003
Product RangeHEXFET
Also Known AsSP001558130
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id78A
Drain Source On State Resistance0.0025ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® Power MOSFET in TO-220AB package optimized for UPS/inverter applications.
- Very low RDS(on) at 4.5V VGS
- Ultra-low gate impedance
- Fully characterized avalanche voltage and current
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
78A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0025ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
HEXFET
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003266