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LTC4449EDCB#PBF

MOSFET Driver IC, High Side And Low Side, 4V-6.5V Supply, 3.2A Out, 13ns Delay, DFN-8

LTC4449EDCB#PBF - MOSFET Driver IC, High Side And Low Side, 4V-6.5V Supply, 3.2A Out, 13ns Delay, DFN-8

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Manufacturer Part No:
LTC4449EDCB#PBF
Order Code:
2294866
Technical Datasheet:
LTC4449EDCB#PBF   Datasheet
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Product Overview

The LTC4449EDCB#PBF is a high frequency Gate Driver that is designed to drive two N-Channel MOSFETs in a synchronous DC/DC converter. The powerful rail-to-rail driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4449 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4449 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which functions at up to 42V above ground. The LTC4449 contains under-voltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an under-voltage condition is present. An adaptive shoot-through protection feature is also built-in to prevent the power loss resulting from MOSFET cross-conduction current.
  • Adaptive shoot-through protection
  • Under-voltage lockout
  • Rail-to-rail output drivers
  • Separate supply to match PWM controller
  • Drives dual N-channel MOSFET
  • 3.2A Peak pull-up current
  • 4.5A Peak pull-down current
  • 8ns TG Rise time driving 3000pF load
  • 7ns TG Fall time driving 3000pF load

Applications

Power Management

Product Information

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:
High Side and Low Side

:
3.2A

:
4V

:
6.5V

:
DFN

:
8Pins

:
14ns

:
13ns

:
-40°C

:
125°C

:
-

:
-

:
MSL 1 - Unlimited
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Technical Docs (3)

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