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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFK420N10T
Order Code3930241
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id420A
Drain Source On State Resistance0.0026ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.67kW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode GigaMOS™ Trench HiPerFET™ power MOSFET. It is suitable for use in synchronous rectification, DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, high speed power switching applications.
- High current handling capability
- Low RDS(on)
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
420A
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
1.67kW
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001