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GAN063-650WSAQ

Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

GAN063-650WSAQ - Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

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Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
GAN063-650WSAQ
Order Code:
3106435
Technical Datasheet:
GAN063-650WSAQ   Datasheet
See all Technical Docs

Product Overview

650 V, 50 mR Gallium Nitride (GaN) FET is a normally-off device that combines Nexperia's state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies offering superior reliability and performance. Typical applications include Hard and soft switching converters for industrial and datacom power, bridgeless totem pole PFC, PV and UPS inverters and servo motor drives.
  • Ultra-low reverse recovery charge
  • Simple gate drive (0 V to +10 V or 12 V)
  • Robust gate oxide (±20 V capability)
  • High gate threshold voltage (+4 V) for very good gate bounce immunity
  • Very low source-drain voltage in reverse conduction mode
  • Transient over-voltage capability (800 V)

Product Information

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:
650V

:
34.5A

:
0.06ohm

:
15nC

:
TP-247

:
Through Hole

:
3Pins

:
-

:
MSL 3 - 168 hours
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Technical Docs (3)

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