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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      BS170

                      Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

                      ONSEMI BS170
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerONSEMI
                      Manufacturer Part NoBS170
                      Order Code1017687
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      29,432 In Stock

                      50,000 more incoming. You can reserve stock now

                      2535 Delivery in 3-5 Business Days(SG stock)
                      26897 Delivery in 4-6 Business Days(UK stock)
                      QuantityPrice
                      5+Rs.25.770
                      10+Rs.17.600
                      100+Rs.9.170
                      500+Rs.8.290
                      1000+Rs.7.130
                      5000+Rs.6.950
                      Price for:Each
                      Minimum: 5
                      Multiple: 5
                      Rs.128.85
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerONSEMI
                      Manufacturer Part NoBS170
                      Order Code1017687
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds60V
                      Continuous Drain Current Id500mA
                      Drain Source On State Resistance1.2ohm
                      Transistor Case StyleTO-92
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max2.1V
                      Power Dissipation830mW
                      No. of Pins3Pins
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (27-Jun-2024)

                      Product Overview

                      The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

                      • Voltage controlled small signal switch
                      • Rugged and reliable
                      • High saturation current capability

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      500mA

                      Transistor Case Style

                      TO-92

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      830mW

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (27-Jun-2024)

                      Drain Source Voltage Vds

                      60V

                      Drain Source On State Resistance

                      1.2ohm

                      Transistor Mounting

                      Through Hole

                      Gate Source Threshold Voltage Max

                      2.1V

                      No. of Pins

                      3Pins

                      Product Range

                      -

                      MSL

                      MSL 1 - Unlimited

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Alternatives for BS170

                      1 Product Found

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      China
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (27-Jun-2024)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.0002
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