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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJL21194G
Order Code9555790
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max250V
Continuous Collector Current16A
Power Dissipation200W
Transistor Case StyleTO-264
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min75hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications.
- Complement to MJL21193G
- Excellent Gain Linearity
- Total Harmonic Distortion Characterized
- Accurate Reproduction of Input Signal
- Reliable Performance at Higher Powers
Applications
Audio, Consumer Electronics, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
16A
Transistor Case Style
TO-264
No. of Pins
3Pins
DC Current Gain hFE Min
75hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
250V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009979