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NTMC083NP10M5L
Dual MOSFET, N and P Channel, 100 V, 100 V, 4.1 A, 4.1 A, 0.0594 ohm
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| Quantity | Price |
|---|---|
| 100+ | Rs.44.140 |
| 500+ | Rs.39.750 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Rs.4,414.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMC083NP10M5L
Order Code3787297RL
Technical Datasheet
Channel TypeN and P Channel
Transistor PolarityN and P Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id4.1A
Continuous Drain Current Id N Channel4.1A
On Resistance Rds(on)0.0594ohm
Continuous Drain Current Id P Channel4.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0594ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0594ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
Power, dual N- and P-channel (100V, 83mohm, 4.5A, -100V, 131ohm, -3.6A) MOSFET is typically used in power tools, battery operated vacuums, UAV/drones, material handling, motor drive and home automation applications.
- Small footprint (5 x 6mm) for compact design
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- Not ESD protected
- Low conduction loss, standard footprint
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
4.1A
Continuous Drain Current Id P Channel
4.1A
Drain Source On State Resistance N Channel
0.0594ohm
Drain Source On State Resistance P Channel
0.0594ohm
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N and P Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
4.1A
On Resistance Rds(on)
0.0594ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001