RFD14N05L

RFD14N05L is a N-Channel logic level power MOSFET using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

• Temperature Compensating PSPICE® Model
• Can be driven directly from CMOS, NMOS, and TTL circuits
• Peak current vs pulse width curve, UIS rating curve
• Drain to source breakdown voltage is 50V min (ID = 250µA, VGS = 0V, TC = 25°C)
• Drain to source on resistance is 0.100 ohm max (ID = 14A, VGS = 5V, TC = 25°C)
• Rise time is 24ns typ (VDD = 25V, ID = 7A, RL = 3.57ohm, VGS = 5V, TC = 25°C)
• Fall time is 16ns typ (VDD = 25V, ID = 7A, RL = 3.57ohm, VGS = 5V, TC = 25°C)
• Source to drain diode voltage is 1.5V max (ISD = 14A)
• Input capacitance is 670pF typ (VDS = 25V, VGS = 0V, f = 1MHz, TC = 25°C)
• TO-251AA package, operating temperature range from -55 to 175°C