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STB36NM60ND
Power MOSFET, N Channel, 600 V, 29 A, 0.097 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB36NM60ND
Order Code3132713RL
Product RangeFDmesh II
Technical Datasheet
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB36NM60ND
Order Code3132713RL
Product RangeFDmesh II
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id29A
Drain Source On State Resistance0.097ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeFDmesh II
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
29A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.097ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
FDmesh II
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00035