Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part No2SC5200-O(Q)
Order Code3870093
Also Known As2SC5200
Technical Datasheet
Available to Order
Notify me when back in stock
Quantity | Price |
---|---|
1+ | Rs.360.920 |
10+ | Rs.237.570 |
100+ | Rs.167.470 |
500+ | Rs.160.260 |
1000+ | Rs.153.240 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.360.92
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SC5200-O(Q)
Order Code3870093
Also Known As2SC5200
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max230V
Continuous Collector Current15A
Power Dissipation150W
Transistor Case StyleTO-3PL
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min55hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
2SC5200-O(Q) is a silicon NPN triple diffused type transistor for power amplifier application.
- High breakdown voltage VCEO = 230V (min)
- Complementary to 2SA1943
- Suitable for use in 100W high fidelity audio amplifier’s output stage
- 150W collector power dissipation (Tc=25°C), 200pF (VCB=10V, IE=0, f=1MHz) collector O/P capacitance
- Collector cut-off current is 5μA max (VCB = 230V, IE = 0A, Ta = 25°C)
- Emitter cut-off current is 5μA max (VEB = 5V, IC = 0A, Ta = 25°C)
- Collector-emitter breakdown voltage is 230V min (IC = 50mA, IB = 0A, Ta = 25°C)
- Collector-emitter saturation voltage is 0.4V typ (IC = 8A, IB = 0.8A, Ta = 25°C)
- Transition frequency is 30MHz typ (VCE = 5V, IC = 1A, Ta = 25°C)
- Junction temperature is 150°C
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
15A
Transistor Case Style
TO-3PL
No. of Pins
3Pins
DC Current Gain hFE Min
55hFE
Product Range
-
Collector Emitter Voltage Max
230V
Power Dissipation
150W
Transistor Mounting
Through Hole
Transition Frequency
30MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85381090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009525