Print Page
IRF520PBF
Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
1,143 In Stock
1,000 more incoming. You can reserve stock now
86 Delivery in 3-5 Business Days(SG stock)
1057 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.66.690 |
| 10+ | Rs.58.270 |
| 100+ | Rs.54.000 |
| 500+ | Rs.51.610 |
| 1000+ | Rs.43.450 |
| 5000+ | Rs.35.290 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.66.69
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF520PBF
Order Code8648239
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.2A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (07-Nov-2024)
Product Overview
The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- ±20V Gate to source voltage
- 2.5°C/W Thermal resistance, junction to case
- 62°C/W Thermal resistance, junction to ambient
Applications
Industrial, Commercial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.2A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for IRF520PBF
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85389000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002