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SI2333DS-T1-E3
P CHANNEL MOSFET, -12V, 4.1A TO-236, FUL
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2333DS-T1-E3
Order Code2371205
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.032ohm
Transistor MountingSurface Mount
Power Dissipation1.25W
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source On State Resistance
0.032ohm
Power Dissipation
1.25W
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
4.1A
Transistor Mounting
Surface Mount
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043