ADG1233YRUZ

ADG1233YRUZ is a low capacitance, triple iCMOS switch. It comprises three independently selectable single-pole, double throw SPDT switch. All channels exhibit break-before-make switching action preventing momentary shorting when switching channels. An EN (active high) input on the ADG1233 enables or disables the device. When disabled, all channels are switched off. The iCMOS (industrial-CMOS) modular manufacturing process combines a high voltage complementary metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analogue ICs capable of 33V operation in a footprint that no other generation of high voltage devices has been able to achieve. Application includes audio and video routing, automatic test equipment, data acquisition systems battery-powered systems, sample-and-hold systems, communication systems.

• Typical off capacitance is 1.5pF (f = 1MHz, VS = 0V, +25°C)
• 0.5pC typical charge injection (VS = 0V, RS = 0 ohm, CL = 1nF, +25°C)
• 120 ohm typical on resistance (VS = ±10V, IS = -1mA, +25°C)
• Fully specified at ±15V/+12V, 3V logic-compatible inputs
• Rail-to-rail operation, break-before-make switching action
• Typical power consumption is <lt/>0.03μW
• Typical source off leakage is ±0.02nA (VD = ±10V, VS = -10V, +25°C)
• Typical off isolation is -80dB (RL = 50 ohm, CL = 5pF, f = 1MHz, 25°C)
• Typical -3dB bandwidth is 900MHz (RL = 50 ohm, CL = 5pF, 25°C)
• 16 lead TSSOP package, operating temperature range from -40°C to +125°C

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party