ADG774ABRQZ-REEL7

ADG774ABRQZ-REEL7 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexer with high impedance outputs. The CMOS process provides low power dissipation yet offers high switching speed and low on resistance. The on-resistance variation is typically less than 0.5 ohm over the input signal range. The bandwidth of the device is typically 400MHz and this, coupled with low distortion (typically 0.3%), makes the part suitable for switching of high speed data signals. The on-resistance profile is very flat over the full analogue input range ensuring excellent linearity and low distortion. CMOS construction ensures ultralow power dissipation. These switches conduct equally well in both directions when on. In the off condition, signal levels upto the supplies are blocked. The device switches exhibit break-before-make switching action.

• TTL-/CMOS-compatible
• Single 3V/5V supply operation
• Low quiescent supply current is 1nA typical
• On resistance is 2.2ohm typical at (VD = 0V to 1V, IS = -10mA)
• On resistance flatness is 0.3 ohm typical (VD = 0V to 1V, IS = -10mA)
• 400MHz typical -3dB bandwidth at (RL = 50 ohm, VDD = 5V ±10%)
• Charge injection is 6pC typical at (CL = 1nF, VDD = 5V ±10%)
• Channel-to-channel crosstalk is -70dB typical at (f = 10MHz, RL = 50 ohm)
• Operating temperature is -40°C to +85°C
• Package style is 16-lead QSOP

Notes

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