LTC4444EMS8E-5#PBF

LTC4444-5 is a high frequency high voltage gate driver. It drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance. This device is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground. This device contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously. It is widely used in application such as distributed power architectures, automotive power supplies, high density power modules, telecommunication systems etc.

• Operating voltage range is 4.5V to 13.5V
• TG peak pull-up current is 1.4A typ, undervoltage lockout
• BG peak pull-up current is 1.75A typ
• BG pull-down resistance is 0.75 ohm
• TG output rise time is 8ns typ at (10% – 90%, CL = 1nF)
• BG output fall time is 3ns typ at (10% – 90%, CL = 1nF)
• TG output fall time is 5ns typ at (10% – 90%, CL = 1nF)
• BG output rise time is 6ns typ at (10% – 90%, CL = 1nF)
• Operating temperature is -40°C to 125°C
• Packaging style is 8-lead plastic MSOP

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party