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HSMS-2850-TR1G
RF Schottky Diode, Zero Bias, Single, 2 V, 1 mA, 250 mV, 0.3 pF, SOT-23
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Product Information
ManufacturerBROADCOM
Manufacturer Part NoHSMS-2850-TR1G
Order Code1056849RL
Technical Datasheet
Diode Capacitance0.3pF
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Product Overview
The HSMS-2850-TR1G is a 3-pin single surface-mount zero bias Schottky Detector Diode has been designed and optimized for use in small signal (pin <lt/>-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF Tag applications where primary (DC bias) power is not available. The Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor.
- High detection sensitivity
- Low flicker noise
- Low FIT (failure in time) rate
- Better thermal conductivity for higher power dissipation
- 175μA at 2V Maximum reverse leakage current
- 8kΩ Typical video resistance
- 500°C/W Thermal resistance
- 150°C Junction temperature
Applications
Signal Processing
Warnings
ESD sensitive device, take proper precaution while handling the device.
Technical Specifications
Diode Capacitance
0.3pF
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000018