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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQU2N100TU
Order Code3368833
Product RangeQFET
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id1.6A
Drain Source On State Resistance7.1ohm
Transistor Case StyleTO-251
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
7.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
QFET
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-251
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002