Print Page
2N7002DW-7-F
Dual MOSFET, N Channel, 60 V, 115 mA, 13.5 ohm
Image is for illustrative purposes only. Please refer to product description.
352,108 In Stock
Need more?
187135 Delivery in 3-5 Business Days(SG stock)
164973 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 500+ | Rs.6.590 |
| 1500+ | Rs.6.460 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
Rs.3,295.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002DW-7-F
Order Code1713824RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)13.5ohm
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel13.5ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2V
No. of Pins6Pins
Power Dissipation Pd200mW
Power Dissipation N Channel200mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching performance
- Low input/output leakage
- Ultra-small surface-mount package
- Halogen-free
- UL94V-0 Flammability rating
Applications
Industrial, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
115mA
On Resistance Rds(on)
13.5ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
13.5ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
200mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
115mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Alternatives for 2N7002DW-7-F
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006