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DMC2038LVT-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 2.6 A, 0.035 ohm
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2038LVT-7
Order Code3127305RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.027ohm
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel2.6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.035ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.074ohm
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd800mW
Power Dissipation N Channel800mW
Power Dissipation P Channel800mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMC2038LVT-7 is a complementary pair enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, power management functions, DC-DC converters, and backlighting.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- 20V drain source voltage (P channel/N channel)
- 3.7A continuous drain current (P channel/N channel)
- 0.027ohm drain source on state resistance (P channel/N channel)
- 800mW power dissipation (P channel/N channel)
- TSOT26 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3.7A
On Resistance Rds(on)
0.027ohm
Continuous Drain Current Id P Channel
2.6A
Drain Source On State Resistance N Channel
0.035ohm
Drain Source On State Resistance P Channel
0.074ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
800mW
Power Dissipation P Channel
800mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
3.7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOT-26
No. of Pins
6Pins
Power Dissipation N Channel
800mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536