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DMC2038LVT
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.027 ohm
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2038LVT
Order Code2061516RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.7A
On Resistance Rds(on)0.027ohm
Continuous Drain Current Id P Channel3.7A
Drain Source On State Resistance N Channel0.027ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.027ohm
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max400mV
No. of Pins6Pins
Power Dissipation Pd1.13W
Power Dissipation N Channel1.13W
Power Dissipation P Channel1.13W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The DMC2038LVT is a N/P-channel complementary Pair enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for DC-to-DC converters and backlighting applications.
- Low ON-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Halogen-free
- UL94V-0 Flammability rating
Applications
Industrial, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3.7A
Continuous Drain Current Id N Channel
3.7A
Continuous Drain Current Id P Channel
3.7A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.027ohm
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
1.13W
Power Dissipation P Channel
1.13W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.027ohm
Drain Source On State Resistance N Channel
0.027ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOT-26
No. of Pins
6Pins
Power Dissipation N Channel
1.13W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000181