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DMG6602SVT
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 2.8 A, 0.06 ohm
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| Quantity | Price |
|---|---|
| 5+ | Rs.32.220 |
| 10+ | Rs.19.080 |
| 100+ | Rs.10.300 |
| 500+ | Rs.8.730 |
| 1000+ | Rs.7.680 |
| 5000+ | Rs.6.770 |
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Multiple: 5
Rs.161.10
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVT
Order Code2061522
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel2.8A
Drain Source On State Resistance N Channel0.06ohm
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel840mW
Power Dissipation P Channel840mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMG6602SVT is a complementary pair enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, DC-DC converters, power management functions.
- Low input capacitance, low on-resistance
- Fast switching speed, low input/output leakage
- Drain source voltage is 30V at TA = +25°C (P/N channel)
- Continuous drain current is 3.4A at TA = +25°C (P/N channel)
- Drain source on state resistance is 0.038ohm at TA = +25°C (P/N channel)
- Power dissipation is 1.12W at TA = +25°C (P/N channel)
- Gate-source voltage is ±20V at TA = +25°C (P/N channel)
- TSOT26 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.8A
Drain Source On State Resistance P Channel
0.095ohm
No. of Pins
6Pins
Power Dissipation P Channel
840mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.4A
Drain Source On State Resistance N Channel
0.06ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
840mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000027