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ZXMHC3F381N8TC
Dual MOSFET, H-Bridge, Complementary N and P Channel, 30 V, 30 V, 3.98 A, 3.98 A, 0.033 ohm
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMHC3F381N8TC
Order Code2061507RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id3.98A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.033ohm
Continuous Drain Current Id N Channel3.98A
Continuous Drain Current Id P Channel3.98A
Drain Source On State Resistance N Channel0.033ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.033ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation Pd870mW
No. of Pins8Pins
Power Dissipation N Channel870mW
Power Dissipation P Channel870mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZXMHC3F381N8TC is a N/P-channel complementary enhancement-mode MOSFET H-Bridge offers low ON-resistance achievable with low gate drive. It is ideal for DC to AC inverter applications.
Applications
Industrial, Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
3.98A
On Resistance Rds(on)
0.033ohm
Continuous Drain Current Id P Channel
3.98A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation P Channel
870mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
3.98A
Drain Source On State Resistance N Channel
0.033ohm
Drain Source On State Resistance P Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation Pd
870mW
Power Dissipation N Channel
870mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000302