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BFQ790H6327XTSA1
Bipolar - RF Transistor, NPN, 6.1 V, 20 GHz, 1.5 W, 300 mA, SOT-89
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ManufacturerINFINEON
Manufacturer Part NoBFQ790H6327XTSA1
Order Code2986497
Also Known AsBFQ 790 H6327, SP001078878
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | Rs.208.290 |
| 10+ | Rs.166.530 |
| 100+ | Rs.124.770 |
| 500+ | Rs.117.810 |
| 1000+ | Rs.105.630 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.208.29
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBFQ790H6327XTSA1
Order Code2986497
Also Known AsBFQ 790 H6327, SP001078878
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max6.1V
Transition Frequency20GHz
Power Dissipation1.5W
Continuous Collector Current300mA
Transistor Case StyleSOT-89
No. of Pins3Pins
DC Current Gain hFE Min60hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
Product Overview
BFQ790H6327XTSA1 is a high linearity RF medium power transistor. It is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. Potential applications includes commercial and industrial wireless infrastructure, ISM band medium power amplifiers and drivers, automated test equipment, UHF television, CATV and DBS. Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
- Collector emitter voltage is 6.1V (max, TA = 25°C)
- Instantaneous total base emitter reverse voltage is -2V (min, DC + RF swing, TA = 25°C)
- DC collector current is 300mA (typ, TA = 25°C)
- Mismatch at output is 10:1 (typ, in compression, over all phase angles, TA = 25°C)
- Dissipated power is 1500mW (typ, TA = 25°C)
- Collector emitter leakage current is 1nA (typ, VCE = 8V, VBE = 0V, TA = 25°C)
- DC current gain is 120 (typ, TA = 25°C)
- RF input power is 18dBm (typ, in- and output matched, TA = 25°C)
- Maximum power gain is 23dB (typ, IC = 250mA, VCE = 5V, f = 0.9GHz)
- SOT89 package, operating case temperature range from -55 to 150°C
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
20GHz
Continuous Collector Current
300mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
6.1V
Power Dissipation
1.5W
Transistor Case Style
SOT-89
DC Current Gain hFE Min
60hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85365090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001