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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Dual MOSFETs
                      Print Page

                      BSD235CH6327XTSA1

                      Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 950 mA, 950 mA, 0.266 ohm

                      INFINEON BSD235CH6327XTSA1
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoBSD235CH6327XTSA1
                      Order Code2443476
                      Also Known AsBSD235C H6327, SP000917610
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      Packaging Options
                      28,009 In Stock

                      Need more?

                      28009 Delivery in 4-6 Business Days(UK stock)
                      QuantityPrice
                      5+Rs.27.900
                      50+Rs.17.330
                      250+Rs.12.010
                      1000+Rs.8.200
                      5000+Rs.7.040
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 5
                      Multiple: 5
                      Rs.139.50
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoBSD235CH6327XTSA1
                      Order Code2443476
                      Also Known AsBSD235C H6327, SP000917610
                      Technical Datasheet

                      Data Sheet

                      Channel TypeComplementary N and P Channel
                      Drain Source Voltage Vds N Channel20V
                      Drain Source Voltage Vds P Channel20V
                      Continuous Drain Current Id N Channel950mA
                      Continuous Drain Current Id P Channel950mA
                      Drain Source On State Resistance N Channel0.266ohm
                      Drain Source On State Resistance P Channel0.266ohm
                      Transistor Case StyleSOT-363
                      No. of Pins6Pins
                      Power Dissipation N Channel500mW
                      Power Dissipation P Channel500mW
                      Operating Temperature Max150°C
                      Product Range-
                      QualificationAEC-Q101
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The BSD235C H6327 is a N/P-channel Power MOSFET within the same package are part of Infineon's famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is suitable for use with DC to Dc converters and on-board charger applications.

                      • Complementary P + N channel
                      • Enhancement-mode
                      • Avalanche rated

                      Applications

                      Industrial, Automotive, Motor Drive & Control, Power Management

                      Warnings

                      Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

                      Technical Specifications

                      Channel Type

                      Complementary N and P Channel

                      Drain Source Voltage Vds P Channel

                      20V

                      Continuous Drain Current Id P Channel

                      950mA

                      Drain Source On State Resistance P Channel

                      0.266ohm

                      No. of Pins

                      6Pins

                      Power Dissipation P Channel

                      500mW

                      Product Range

                      -

                      MSL

                      MSL 1 - Unlimited

                      Drain Source Voltage Vds N Channel

                      20V

                      Continuous Drain Current Id N Channel

                      950mA

                      Drain Source On State Resistance N Channel

                      0.266ohm

                      Transistor Case Style

                      SOT-363

                      Power Dissipation N Channel

                      500mW

                      Operating Temperature Max

                      150°C

                      Qualification

                      AEC-Q101

                      SVHC

                      No SVHC (21-Jan-2025)

                      Technical Docs (2)

                      Simulation Model EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      Malaysia
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.000005
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