Print Page
BSZ215CHXTMA1
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 5.1 A, 0.041 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ215CHXTMA1
Order Code3294674RL
Product RangeOptiMOS 2 Series
Also Known AsBSZ215C H, SP001277210
Technical Datasheet
25,184 In Stock
Need more?
25184 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Rs.76.540 |
| 500+ | Rs.56.520 |
| 1000+ | Rs.49.880 |
| 5000+ | Rs.45.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.7,654.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ215CHXTMA1
Order Code3294674RL
Product RangeOptiMOS 2 Series
Also Known AsBSZ215C H, SP001277210
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id5.1A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.041ohm
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.041ohm
Drain Source On State Resistance P Channel0.041ohm
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Transistor Case StyleTSDSON
No. of Pins8Pins
Power Dissipation Pd2.5W
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max175°C
Product RangeOptiMOS 2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
5.1A
On Resistance Rds(on)
0.041ohm
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance N Channel
0.041ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSDSON
Power Dissipation Pd
2.5W
Power Dissipation P Channel
2.5W
Product Range
OptiMOS 2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
5.1A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.041ohm
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Power Dissipation N Channel
2.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109