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FZ825R33HE4DBPSA1
IGBT Module, Dual, Common Emitter, 825 A, 2.4 V, 150 °C, Module
Available to Order
Manufacturer Standard Lead Time: 52 week(s)
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| Quantity | Price |
|---|---|
| 1+ | Rs.106,031.030 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.106,031.03
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFZ825R33HE4DBPSA1
Order Code3768889
Product RangeIHM-B
Also Known AsSP005550793, FZ825R33HE4D
Technical Datasheet
IGBT ConfigurationDual, Common Emitter
Continuous Collector Current825A
Collector Emitter Saturation Voltage2.4V
Power Dissipation-
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max3.3kV
IGBT TechnologyIGBT 4 [Trench/Field Stop]
Transistor MountingPanel
Product RangeIHM-B
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
IGBT Configuration
Dual, Common Emitter
Collector Emitter Saturation Voltage
2.4V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
IGBT 4 [Trench/Field Stop]
Product Range
IHM-B
Continuous Collector Current
825A
Power Dissipation
-
Transistor Case Style
Module
Collector Emitter Voltage Max
3.3kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85423100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):1.499122