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IGB070S10S1XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 38 A, 0.007 ohm, 6.1 nC, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGB070S10S1XTMA1
Order Code4680813RL
Also Known AsIGB070S10S1, SP006039129
Technical Datasheet
4,000 In Stock
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4000 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Rs.181.870 |
| 500+ | Rs.171.620 |
| 1000+ | Rs.159.310 |
Price for:Each (Supplied on Cut Tape)
Minimum: 150
Multiple: 1
Rs.27,280.50
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGB070S10S1XTMA1
Order Code4680813RL
Also Known AsIGB070S10S1, SP006039129
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id38A
Drain Source On State Resistance0.007ohm
Typical Gate Charge6.1nC
No. of Pins4Pins
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.007ohm
No. of Pins
4Pins
Continuous Drain Current Id
38A
Typical Gate Charge
6.1nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001