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IGB110S10S1XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 23 A, 0.011 ohm, 3.4 nC, TSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIGB110S10S1XTMA1
Order Code4680814RL
Also Known AsIGB110S10S1, SP005751575
Technical Datasheet
4,950 In Stock
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| Quantity | Price |
|---|---|
| 100+ | Rs.106.950 |
| 500+ | Rs.93.560 |
| 1000+ | Rs.82.680 |
| 5000+ | Rs.77.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 150
Multiple: 1
Rs.16,042.50
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGB110S10S1XTMA1
Order Code4680814RL
Also Known AsIGB110S10S1, SP005751575
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id23A
Drain Source On State Resistance0.011ohm
Typical Gate Charge3.4nC
No. of Pins4Pins
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.011ohm
No. of Pins
4Pins
Continuous Drain Current Id
23A
Typical Gate Charge
3.4nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001