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IGLR65R200D2XUMA1
Gallium Nitride (GaN) Transistor, 650 V, 9.2 A, 0.24 ohm, 1.26 nC, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGLR65R200D2XUMA1
Order Code4573840RL
Also Known AsIGLR65R200D2, SP005918715
Technical Datasheet
Available to Order
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| Quantity | Price |
|---|---|
| 100+ | Rs.114.380 |
| 500+ | Rs.96.200 |
| 1000+ | Rs.89.250 |
| 5000+ | Rs.82.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.11,438.00
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGLR65R200D2XUMA1
Order Code4573840RL
Also Known AsIGLR65R200D2, SP005918715
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id9.2A
Drain Source On State Resistance0.24ohm
Typical Gate Charge1.26nC
No. of Pins8Pins
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.24ohm
No. of Pins
8Pins
Continuous Drain Current Id
9.2A
Typical Gate Charge
1.26nC
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001