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ManufacturerINFINEON
Manufacturer Part NoIPA60R099C6XKSA1
Order Code2212837
Also Known AsIPA60R099C6, SP000658000
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA60R099C6XKSA1
Order Code2212837
Also Known AsIPA60R099C6, SP000658000
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id37.9A
Drain Source On State Resistance0.099ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation35W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IPA60R099C6 is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ C6 combines Infineon's experience as the leading Superjunction MOSFET supplier with Best-in-Class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
- Easy control of switching behaviour
- Extremely low losses due to very low Figure of Merit (RDS (ON) x Qg and Eoss)
- Very high commutation ruggedness
- Easy to use
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Better performance in comparison to previous CoolMOS™ generations
- More efficient, more compact, lighter and cooler
- Improved power density
- Improved reliability
- Better light load efficiency
- General purpose part can be used in both soft and hard switching topologies
- Improved efficiency in hard switching applications
- Reduces possible ringing due to PCB layout and package parasitic effects
Applications
Consumer Electronics, Portable Devices, Communications & Networking, Lighting, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
37.9A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.099ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85423100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003184