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IPB024N08N5ATMA1
Power MOSFET, N Channel, 80 V, 120 A, 2100 µohm, TO-263 (D2PAK), Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB024N08N5ATMA1
Order Code3816954RL
Product RangeOptiMOS 5
Also Known AsSP001227044, IPB024N08N5
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id120A
Drain Source On State Resistance2100µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 5
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS 5
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0006