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IPB60R099C6ATMA1

Name: INFINEON IPB60R099C6ATMA1
Brand: INFINEON
SKU: 2443389RL
Availability: BackOrder

Power MOSFET, N Channel, 650 V, 37.9 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

Image is for illustrative purposes only. Please refer to product description.

ManufacturerINFINEON

Manufacturer Part NoIPB60R099C6ATMA1

Order Code2443389RL

Also Known AsIPB60R099C6, SP000687468

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

Cut Tape

Re-Reel

Available to Order

Manufacturer Standard Lead Time: 18 week(s)

Notify me when back in stock

Quantity	Price
100+	Rs.272.460
500+	Rs.262.100
1000+	Rs.251.740

Price for:Each (Supplied on Cut Tape)

Minimum: 100

Multiple: 1

Rs.27,246.00

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Product Information

ManufacturerINFINEON

Manufacturer Part NoIPB60R099C6ATMA1

Order Code2443389RL

Also Known AsIPB60R099C6, SP000687468

Technical Datasheet

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds650V

Continuous Drain Current Id37.9A

Drain Source On State Resistance0.09ohm

Transistor Case StyleTO-263 (D2PAK)

Transistor MountingSurface Mount

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max3V

Power Dissipation278W

No. of Pins3Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCNo SVHC (21-Jan-2025)

Product Overview

The IPB60R099C6 is a 650V CoolMOS™ N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
Better performance in comparison to previous CoolMOS™ generations

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

37.9A

Transistor Case Style

TO-263 (D2PAK)

Rds(on) Test Voltage

10V

Power Dissipation

278W

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (21-Jan-2025)

Drain Source Voltage Vds

650V

Drain Source On State Resistance

0.09ohm

Transistor Mounting

Surface Mount

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Product Range

MSL

MSL 1 - Unlimited

Technical Docs (1)

Technical Data Sheet EN

Associated Products

4 Products Found

Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out

Tariff No:85412900

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:No SVHC (21-Jan-2025)

Download Product Compliance Certificate

Product Compliance Certificate

Weight (kg):.00181

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