Print Page
IPD70R900P7SAUMA1
Power MOSFET, N Channel, 700 V, 6 A, 0.74 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD70R900P7SAUMA1
Order Code2803397
Product RangeCoolMOS P7
Also Known AsIPD70R900P7S, SP001491638
Technical Datasheet
1,378 In Stock
Need more?
1378 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.47.930 |
| 10+ | Rs.40.100 |
| 100+ | Rs.29.570 |
| 500+ | Rs.25.390 |
| 1000+ | Rs.19.390 |
| 5000+ | Rs.19.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.47.93
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD70R900P7SAUMA1
Order Code2803397
Product RangeCoolMOS P7
Also Known AsIPD70R900P7S, SP001491638
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds700V
Continuous Drain Current Id6A
Drain Source On State Resistance0.74ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation30.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
700V CoolMOS™ P7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and recommended for Flyback topologies for example used in chargers, adapters, lighting applications, etc.
- Extremely low losses due to very low FOM Rds(on)*Qg and Rds(on)*Eoss
- Excellent thermal behaviour
- Integrated ESD protection diode
- Low switching losses (Eoss)
- Qualified for standard grade applications
- Cost competitive technology
- Lower temperature
- High ESD ruggedness
- Enables efficiency gains at higher switching frequencies
- Enables high power density designs and small form factors
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
30.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
700V
Drain Source On State Resistance
0.74ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS P7
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907