Print Page
IPL60R185CFD7AUMA1
Power MOSFET, N Channel, 600 V, 14 A, 0.153 ohm, VSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPL60R185CFD7AUMA1
Order Code2807987
Product RangeCoolMOS CFD7
Also Known AsIPL60R185CFD7, SP001617940
Technical Datasheet
3,000 In Stock
Need more?
3000 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.254.460 |
| 10+ | Rs.163.110 |
| 100+ | Rs.137.880 |
| 500+ | Rs.113.520 |
| 1000+ | Rs.104.820 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.254.46
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPL60R185CFD7AUMA1
Order Code2807987
Product RangeCoolMOS CFD7
Also Known AsIPL60R185CFD7, SP001617940
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id14A
Drain Source On State Resistance0.153ohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation85W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFD7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
600V CoolMOS™ CFD7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in soft switching topologies optimized for phase-shift full bridge (ZVS), LLC applications server, telecom, EV Charging.
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge(Qrr)
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Excellent hard commutation ruggedness
- Highest reliability for resonant topologies
- Highest efficiency without standing ease-of-use/performance trade off
- Enabling increased power density solutions
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
14A
Transistor Case Style
VSON
Rds(on) Test Voltage
10V
Power Dissipation
85W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.153ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
CoolMOS CFD7
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0006