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Quantity | Price |
---|---|
1+ | Rs.260.900 |
10+ | Rs.199.670 |
25+ | Rs.196.680 |
50+ | Rs.193.690 |
100+ | Rs.190.690 |
250+ | Rs.187.700 |
500+ | Rs.184.710 |
1000+ | Rs.181.710 |
Product Information
Product Overview
IR21844SPBF is a high voltage, high-speed power MOSFET and IGBT half-bridge driver with dependent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation, fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune, IN/active low SD input logic
- Gate drive supply range from 10 to 20V, undervoltage lockout for both channels
- 3.3V and 5V input logic compatible, matched propagation delay for both channels
- Logic and power ground +/- 5V offset, lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4A/1.8A, cross conduction prevention logic
- Dead time range program 0.4 to 5us, VSS/COM ground pins
- Turn-on propagation delay is 680nsec typ (VS=0V, TA=25°C)
- Turn-off propagation delay is 270nsec typ (VS=0V or 600V, TA=25°C)
- 14 lead SOIC package, ambient temperature range from -40 to 125°C
Technical Specifications
2Channels
Half Bridge
14Pins
Surface Mount
1.9A
10V
-40°C
680ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
2.3A
20V
125°C
270ns
-
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate