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IRF60B217
Power MOSFET, N Channel, 60 V, 60 A, 7300 µohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF60B217
Order Code2709977
Product RangeStrongIRFET, HEXFET
Also Known AsSP001571396
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF60B217
Order Code2709977
Product RangeStrongIRFET, HEXFET
Also Known AsSP001571396
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance7300µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation83W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET, HEXFET
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
7300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.7V
No. of Pins
3Pins
Product Range
StrongIRFET, HEXFET
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003