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IRF60DM206
Power MOSFET, StrongIRFET™, N Channel, 60 V, 130 A, 0.0029 ohm, DirectFET ME, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRF60DM206
Order Code2781110RL
Product RangeStrongIRFET Series
Also Known AsSP001561876
Technical Datasheet
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| Quantity | Price |
|---|---|
| 500+ | Rs.120.640 |
| 1000+ | Rs.101.830 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
Rs.60,320.00
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF60DM206
Order Code2781110RL
Product RangeStrongIRFET Series
Also Known AsSP001561876
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id130A
Drain Source On State Resistance0.0029ohm
Transistor Case StyleDirectFET ME
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
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Product Overview
IRF60DM206 is a DirectFET® N-channel power MOSFET. Application includes brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 60V (Min, VGS = 0V, ID = 250µA, TJ = 25°C)
- Static drain-to-source on-resistance is 2.2mohm (typ, VGS = 10V, ID = 80A, TJ = 25°C)
- Continuous drain current, VGS at 10V is 130A (max, ID at TC = 25°C)
- Gate-to-source forward leakage is 100nA/-100nA (max, VGS = 20V/VGS = -20V, TC = 25°C)
- Internal gate resistance is 0.8ohm (typ, TC = 25°C)
- Turn-on delay time is 17ns (typ, VDD = 30V, TJ = 25°C)
- DirectFET® ME package, operating junction and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
130A
Transistor Case Style
DirectFET ME
Rds(on) Test Voltage
10V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0029ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
No. of Pins
8Pins
Product Range
StrongIRFET Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000256