Print Page
IRL7486MTRPBF
Power MOSFET, N Channel, 40 V, 209 A, 0.00125 ohm, DirectFET ME, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRL7486MTRPBF
Order Code2577179
Product RangeStrongIRFET Series
Also Known AsSP001567046
Technical Datasheet
18,717 In Stock
Need more?
18717 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.132.000 |
| 10+ | Rs.115.930 |
| 100+ | Rs.99.850 |
| 500+ | Rs.83.010 |
| 1000+ | Rs.80.700 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.132.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL7486MTRPBF
Order Code2577179
Product RangeStrongIRFET Series
Also Known AsSP001567046
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id209A
Drain Source On State Resistance0.00125ohm
Transistor Case StyleDirectFET ME
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET Series
Qualification-
MSLMSL 2 - 1 year
SVHCNo SVHC (21-Jan-2025)
Product Overview
IRL7486MTRPBF is a N channel power MOSFET. Application includes brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Optimized for logic level drive
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 40V (min, VGS = 0V, ID = 250µA, TJ = 25°C)
- Static drain-to-source on-resistance is 1.0mohm (typ, VGS = 10V, ID = 123A, TJ = 25°C)
- Continuous drain current, VGS at 10V (silicon limited) is 209A (max, TC = 25°C)
- Internal gate resistance is 0.97ohm (typ, TJ = 25°C)
- Forward transconductance is 427S (TJ = 25°C, VDS = 10V, ID = 123A, typ)
- DirectFET® ME package, operating junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
209A
Transistor Case Style
DirectFET ME
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.00125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
StrongIRFET Series
MSL
MSL 2 - 1 year
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001