IRS2001STRPBF
MOSFET Driver, High Side and Low Side, 10 V to 20 V Supply, 0.6 A Peak Out, 160 ns Delay, SOIC-8
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| Quantity | Price |
|---|---|
| 1+ | Rs.102.880 |
| 10+ | Rs.92.440 |
| 50+ | Rs.89.830 |
| 100+ | Rs.87.220 |
| 250+ | Rs.79.960 |
| 500+ | Rs.72.690 |
| 1000+ | Rs.57.380 |
| 2500+ | Rs.54.260 |
Product Information
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Product Overview
The IRS2001SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- 3.3, 5 and 15V Logic compatible
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
2Channels
High Side and Low Side
8Pins
Surface Mount
290mA
10V
-40°C
160ns
-
MSL 2 - 1 year
-
MOSFET
SOIC
Non-Inverting
600mA
20V
125°C
150ns
-
No SVHC (17-Jan-2023)
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate