SI4435DYPBF
Power MOSFET, P Channel, 30 V, 8 A, 0.015 ohm, SOIC, Surface Mount
Product Information
Product Overview
The SI4435DYPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
- 50°C/W Maximum junction-to-ambient
Applications
Power Management
Technical Specifications
P Channel
8A
SOIC
10V
2.5W
150°C
-
30V
0.015ohm
Surface Mount
1V
8Pins
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate