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IXFH12N100Q
Power MOSFET, HiPerFET, N Channel, 1 kV, 12 A, 1.05 ohm, TO-247, Through Hole
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH12N100Q
Order Code7347839
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id12A
Drain Source On State Resistance1.05ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IXFH12N100Q
1 Product Found
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
1.05ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5.5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
12A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006