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IXFP8N85X
Power MOSFET, N Channel, 850 V, 8 A, 0.85 ohm, TO-220, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFP8N85X
Order Code3438393
Product RangeX-Class HiPerFET
Technical Datasheet
2 In Stock
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2 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.351.050 |
| 10+ | Rs.189.060 |
| 100+ | Rs.182.240 |
| 500+ | Rs.178.830 |
| 1000+ | Rs.172.010 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.351.05
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFP8N85X
Order Code3438393
Product RangeX-Class HiPerFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds850V
Continuous Drain Current Id8A
Drain Source On State Resistance0.85ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeX-Class HiPerFET
Qualification-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
850V
Drain Source On State Resistance
0.85ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5.5V
No. of Pins
3Pins
Product Range
X-Class HiPerFET
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004