Print Page
IXFX20N120
Power MOSFET, HiPerFET, N Channel, 1.2 kV, 20 A, 0.75 ohm, PLUS247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFX20N120
Order Code7348037
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id20A
Drain Source On State Resistance0.75ohm
Transistor Case StylePLUS247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation780W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
0.75ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
20A
Transistor Case Style
PLUS247
Rds(on) Test Voltage
10V
Power Dissipation
780W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006