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Quantity | Price |
---|---|
1+ | Rs.701.790 |
5+ | Rs.650.420 |
10+ | Rs.599.040 |
50+ | Rs.547.670 |
100+ | Rs.496.290 |
250+ | Rs.445.490 |
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Multiple: 1
Rs.701.79
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA3N120HV
Order Code3930511
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id3A
Drain Source On State Resistance4.5ohm
Transistor Case StyleTO-263
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode suitable for use in high voltage power supplies, capacitor discharge applications and pulse circuits applications.
- High voltage power MOSFET
- Moulding epoxies meet UL94V-0 flammability classification
- High blocking voltage
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TO-263
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
4.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001