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IXTH10N100D2
Power MOSFET, N Channel, 1 kV, 10 A, 1.5 ohm, TO-247, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | Rs.1,619.840 |
| 5+ | Rs.1,544.170 |
| 10+ | Rs.1,468.490 |
| 50+ | Rs.1,392.810 |
| 100+ | Rs.1,317.130 |
| 250+ | Rs.1,263.360 |
Price for:Each
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Multiple: 1
Rs.1,619.84
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH10N100D2
Order Code3930489
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id10A
Drain Source On State Resistance1.5ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max4.5V
Power Dissipation695W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
N-channel depletion mode MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-247
Rds(on) Test Voltage
0V
Power Dissipation
695W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536